منابع مشابه
TID Effect in SOI Technology
In this paper, a brief overview of TID effect in SOI technology is presented. The introduction of buried oxide(BOX) adds vulnerability to TID effect in SOI transistors because of its large thickness. Also the BOX introduces special charge traps, the delocalized spin centers, which in most cases are positive. The charge buildup in BOX could increase the leakage current in front gate transistor i...
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ژورنال
عنوان ژورنال: BARN - Forskning om barn og barndom i Norden
سال: 2020
ISSN: 2535-5449,0800-1669
DOI: 10.5324/barn.v35i4.3684